Difference between revisions of "UITF Mott Detectors"
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* Ion-Implanted Silicon Charged Particles Detectors | * Ion-Implanted Silicon Charged Particles Detectors | ||
− | * Ultra-thin entrance window ( | + | * Ultra-thin entrance window (500Å) for optimum energy resolution (FWHM, 𝛼=13 keV, 𝛽=7 keV) |
* B Mount | * B Mount | ||
Line 50: | Line 50: | ||
* Ion-Implanted Silicon Charged Particles Detectors | * Ion-Implanted Silicon Charged Particles Detectors | ||
− | * Ultra-thin entrance window ( | + | * Ultra-thin entrance window (500Å) for optimum energy resolution (FWHM, 𝛼=12 keV , 𝛽=6 keV) |
* B Mount | * B Mount |
Revision as of 11:43, 17 January 2022
ORTEC Electronics Modules
- (1) ORTEC 710 Quad High Voltage Bias Supply (1 - 1000 V)
- (2) ORTEC 142A Preamplifier for detector input capacitance 0 to 100 pF (conversion gain 45 mV/MeV)
- (2) ORTEC 142B Preamplifier for detector input capacitance 100 to 400 pF (conversion gain 20 mV/MeV)
- (2) ORTEC Model 590A Amplifier and Timing Single-Channel Analyzer (SCA)
- (2) ORTEC Model 570 Amplifier
Single-Channel Analyzer (SCA)
- SCA Out:
- Standard NIM of +5 V, 500 ns wide if the amplified signal passes the threshold of the Lower Level discriminator
- Connect to Scaler
- Amp Out:
- Energy output (Amplified: x5 to x1250)
- Connect to fADC
ORTEC ULTRA Detectors
(2) (BU-013-050-1000-S)
- Ion-Implanted Silicon Charged Particles Detectors
- Ultra-thin entrance window (500Å) for optimum energy resolution (FWHM, 𝛼=13 keV, 𝛽=7 keV)
- B Mount
- Detector size of 50 mm2
- Depletion Depth (Range) of 1000 um for energies ≤ 500 keV
- Bias Voltage: +115 V
(2) (BU-012-050-100)
- Ion-Implanted Silicon Charged Particles Detectors
- Ultra-thin entrance window (500Å) for optimum energy resolution (FWHM, 𝛼=12 keV , 𝛽=6 keV)
- B Mount
- Detector size of 50 mm2
- Depletion Depth (Range) of 100 um for energies < 200 keV
- Bias Voltage: +50 V