Difference between revisions of "GTS meeting 7 23 18"
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Gun = 200 kV | Gun = 200 kV | ||
− | + | Laser rms = 0.436 mm | |
− | + | Gun Solenoid off | |
Anode bias = +1000 V | Anode bias = +1000 V | ||
Upstream Ion Collector bias = -44 V | Upstream Ion Collector bias = -44 V | ||
Downstream Ion Collector bias = -92 V (one electrode, second electrode is grounded) | Downstream Ion Collector bias = -92 V (one electrode, second electrode is grounded) | ||
+ | |||
* Summary of lifetime measurements: | * Summary of lifetime measurements: | ||
Line 13: | Line 14: | ||
** 60-min Sb GaAs substrate photocathode lifetime: [https://logbooks/entry/3581644] | ** 60-min Sb GaAs substrate photocathode lifetime: [https://logbooks/entry/3581644] | ||
** 30-min Sb GaAs substrate photocathode lifetime: [https://logbooks/entry/3581642] | ** 30-min Sb GaAs substrate photocathode lifetime: [https://logbooks/entry/3581642] | ||
+ | |||
+ | |||
+ | * Laser heating measurements: | ||
+ | ** 60-min Sb GaAs substrate photocathode heating | ||
+ | ** 30-min Sb GaAs substrate photocathode heating |
Latest revision as of 08:49, 23 July 2018
- Measurements Conditions:
Gun = 200 kV Laser rms = 0.436 mm Gun Solenoid off Anode bias = +1000 V Upstream Ion Collector bias = -44 V Downstream Ion Collector bias = -92 V (one electrode, second electrode is grounded)
- Summary of lifetime measurements:
- Laser heating measurements:
- 60-min Sb GaAs substrate photocathode heating
- 30-min Sb GaAs substrate photocathode heating