Difference between revisions of "GTS meeting 6 18 18"
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| − | * Photocathodes activation with different Sb deposition time (5 mm limited area activation close to the center of GaAs substrate): | + | * Photocathodes activation with different Sb deposition time (5 mm limited area activation close to the center of GaAs substrate, with 25 A supply to Sb heater ): |
# 30 minutes Sb deposition | # 30 minutes Sb deposition | ||
# 60 minutes Sb deposition | # 60 minutes Sb deposition | ||
Revision as of 06:53, 18 June 2018
- GTS updated plan
- Photocathodes activation with different Sb deposition time (5 mm limited area activation close to the center of GaAs substrate, with 25 A supply to Sb heater ):
- 30 minutes Sb deposition
- 60 minutes Sb deposition
- 90 minutes Sb deposition
- CST microwave studio simulations of 300 kV GTS gun