Difference between revisions of "GTS meeting 10 30 17"
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| − | * Gain switched diode laser at 1064 nm will be ready for installation next week (1064 nm, 50-70 ps Gaussian pulses, efficiency > 30%, 500 mW output, | + | * Gain switched diode laser at 1064 nm will be ready for installation next week (1064 nm, 50-70 ps Gaussian pulses, efficiency > 30%, 500 mW output, 1497/8=187.125 MHz). |
Revision as of 13:39, 6 November 2017
- CEBAF style Harp installed. Yan and Mike Tiefenback will do a functional test.
- New bialkali antimonide photocathode was activated (full area) with QE ~4.8%.
- Gain switched diode laser at 1064 nm will be ready for installation next week (1064 nm, 50-70 ps Gaussian pulses, efficiency > 30%, 500 mW output, 1497/8=187.125 MHz).