Difference between revisions of "GTS meeting 11 06 17"
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(Created page with "* Beamline bake * New bialkali antimonide photocathode was activated (full area) with QE ~4.8%. * Gain switched diode laser at 1064 nm will be ready for installation next...") |
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* Gain switched diode laser at 1064 nm will be ready for installation next week (1064 nm, 50-70 ps Gaussian pulses, efficiency > 30%, 500 mW output, 400 MHz). | * Gain switched diode laser at 1064 nm will be ready for installation next week (1064 nm, 50-70 ps Gaussian pulses, efficiency > 30%, 500 mW output, 400 MHz). | ||
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| + | * Planned measurements: | ||
| + | # Measure beam magnetization (beam sizes and rotation angle) versus solenoid field from photocathode center and for two laser sizes | ||
| + | # Map beam emittance vs spot location | ||
| + | # Measure lifetime at 5 mA with RF laser and solenoid magnet off/on | ||
Revision as of 11:06, 5 November 2017
- Beamline bake
- New bialkali antimonide photocathode was activated (full area) with QE ~4.8%.
- Gain switched diode laser at 1064 nm will be ready for installation next week (1064 nm, 50-70 ps Gaussian pulses, efficiency > 30%, 500 mW output, 400 MHz).
- Planned measurements:
- Measure beam magnetization (beam sizes and rotation angle) versus solenoid field from photocathode center and for two laser sizes
- Map beam emittance vs spot location
- Measure lifetime at 5 mA with RF laser and solenoid magnet off/on