Difference between revisions of "GTS meeting 11 06 17"
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| − | * Gain switched diode laser at | + | * Gain switched diode laser at 1066 nm is ready for installation this week (1066 nm, 50 ps Gaussian pulses, doubling efficiency > 30%, 1.5W output, 1497/4=374.25 MHz) |
Latest revision as of 12:24, 4 June 2018
- Beamline bake is completed
- New bialkali antimonide photocathode was activated (full area) with QE ~4.8%
- Gain switched diode laser at 1066 nm is ready for installation this week (1066 nm, 50 ps Gaussian pulses, doubling efficiency > 30%, 1.5W output, 1497/4=374.25 MHz)
- Planned measurements:
- Commission harps
- Map beam emittance vs spot location and laser size
- Measure beam magnetization (beam sizes and rotation angle) versus solenoid field from photocathode center and for two laser sizes
- Measure lifetime at 5 mA with RF laser and solenoid magnet off/on