Difference between revisions of "GTS meeting 11 06 17"
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| − | * Beamline bake | + | * Beamline bake is completed |
| − | * New bialkali antimonide photocathode was activated (full area) with QE ~4.8% | + | * New bialkali antimonide photocathode was activated (full area) with QE ~4.8% |
| − | * Gain switched diode laser at 1064 nm | + | * Gain switched diode laser at 1064 nm is ready for installation (?) (1064 nm, 50-70 ps Gaussian pulses, efficiency > 30%, 500 mW output, 400 MHz) |
Revision as of 10:33, 6 November 2017
- Beamline bake is completed
- New bialkali antimonide photocathode was activated (full area) with QE ~4.8%
- Gain switched diode laser at 1064 nm is ready for installation (?) (1064 nm, 50-70 ps Gaussian pulses, efficiency > 30%, 500 mW output, 400 MHz)
- Planned measurements:
- Commission harps
- Map beam emittance vs spot location
- Measure beam magnetization (beam sizes and rotation angle) versus solenoid field from photocathode center and for two laser sizes
- Measure lifetime at 5 mA with RF laser and solenoid magnet off/on