Difference between revisions of "UITF Mott Detectors"
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| Line 33: | Line 33: | ||
| β | ==='''(2) (BU-013-050- | + | ==='''(2) (BU-013-050-500)'''=== |
* Ion-Implanted Silicon Charged Particles Detectors | * Ion-Implanted Silicon Charged Particles Detectors | ||
| β | * Ultra-thin entrance window (500Γ
) for optimum energy resolution (FWHM, πΌ=13 keV, π½=7 keV) | + | * Ultra-thin entrance window (500Γ
) for optimum energy resolution (FWHM, πΌ=13 keV , π½=7 keV) |
* B Mount | * B Mount | ||
| Line 43: | Line 43: | ||
* Detector size of 50 mm<sup>2</sup> | * Detector size of 50 mm<sup>2</sup> | ||
| β | * Depletion Depth (Range) of | + | * Depletion Depth (Range) of 500 um for energies β€ 300 keV |
| β | * Bias Voltage: + | + | * Bias Voltage: +180 V |
| + | * S/N: 22061675, 22061676 | ||
| β | ==='''(2) (BU- | + | |
| + | ==='''(2) (BU-013-050-1000-S)'''=== | ||
* Ion-Implanted Silicon Charged Particles Detectors | * Ion-Implanted Silicon Charged Particles Detectors | ||
| β | * Ultra-thin entrance window (500Γ
) for optimum energy resolution (FWHM, πΌ= | + | * Ultra-thin entrance window (500Γ
) for optimum energy resolution (FWHM, πΌ=13 keV, π½=7 keV) |
* B Mount | * B Mount | ||
| Line 58: | Line 60: | ||
* Detector size of 50 mm<sup>2</sup> | * Detector size of 50 mm<sup>2</sup> | ||
| β | * Depletion Depth (Range) of | + | * Depletion Depth (Range) of 1000 um for energies β€ 500 keV |
| β | * Bias Voltage: + | + | * Bias Voltage: +115 V |
| + | * Serial No: 40-015A11, 40-015A12 | ||
| β | ==='''(2) (BU- | + | |
| + | ==='''(2) (BU-012-050-100)'''=== | ||
* Ion-Implanted Silicon Charged Particles Detectors | * Ion-Implanted Silicon Charged Particles Detectors | ||
| β | * Ultra-thin entrance window (500Γ
) for optimum energy resolution (FWHM, πΌ= | + | * Ultra-thin entrance window (500Γ
) for optimum energy resolution (FWHM, πΌ=12 keV , π½=6 keV) |
* B Mount | * B Mount | ||
| Line 73: | Line 77: | ||
* Detector size of 50 mm<sup>2</sup> | * Detector size of 50 mm<sup>2</sup> | ||
| β | * Depletion Depth (Range) of | + | * Depletion Depth (Range) of 100 um for energies β€ 100 keV |
| + | |||
| + | * Bias Voltage: +50 V | ||
| β | * | + | * Serial No: 38-130Z15, 38-130Z16 |
Latest revision as of 12:22, 26 June 2022
Contents
ORTEC Electronics Modules
- (1) ORTEC 710 Quad High Voltage Bias Supply (1 - 1000 V) [1]
- (2) ORTEC 142A Preamplifier for detector input capacitance 0 to 100 pF (conversion gain 45 mV/MeV) [2]
- (2) ORTEC 142B Preamplifier for detector input capacitance 100 to 400 pF (conversion gain 20 mV/MeV) [3]
- (2) ORTEC Model 590A Amplifier and Timing Single-Channel Analyzer (SCA) [4]
- (2) ORTEC Model 570 Amplifier [5]
Single-Channel Analyzer (SCA)
590A Amplifier and Timing Single-Channel Analyzer [6]
- SCA Out:
- Standard NIM of +5 V, 500 ns wide if the amplified signal passes the threshold of the Lower Level discriminator
- Connect to Scaler
- Amp Out:
- Energy output (Amplified: x5 to x1250)
- Connect to fADC
ORTEC ULTRA Detectors
ULTRA Ion Implanted Silicon Charged Particle Radiation Detectors [7]
(2) (BU-013-050-500)
- Ion-Implanted Silicon Charged Particles Detectors
- Ultra-thin entrance window (500Γ ) for optimum energy resolution (FWHM, πΌ=13 keV , π½=7 keV)
- B Mount
- Detector size of 50 mm2
- Depletion Depth (Range) of 500 um for energies β€ 300 keV
- Bias Voltage: +180 V
- S/N: 22061675, 22061676
(2) (BU-013-050-1000-S)
- Ion-Implanted Silicon Charged Particles Detectors
- Ultra-thin entrance window (500Γ ) for optimum energy resolution (FWHM, πΌ=13 keV, π½=7 keV)
- B Mount
- Detector size of 50 mm2
- Depletion Depth (Range) of 1000 um for energies β€ 500 keV
- Bias Voltage: +115 V
- Serial No: 40-015A11, 40-015A12
(2) (BU-012-050-100)
- Ion-Implanted Silicon Charged Particles Detectors
- Ultra-thin entrance window (500Γ ) for optimum energy resolution (FWHM, πΌ=12 keV , π½=6 keV)
- B Mount
- Detector size of 50 mm2
- Depletion Depth (Range) of 100 um for energies β€ 100 keV
- Bias Voltage: +50 V
- Serial No: 38-130Z15, 38-130Z16
