Difference between revisions of "CIS-ASY-R30-3"
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| + | * [https://wiki.jlab.org/ciswiki/index.php/18%22_Photogun_ala_GTS this assembly is being developed as th next CEBAF 200 kV gun based on the GTS design] | ||
* 18" HV chamber NEG coated and originally built with WP NEG modules and wire mesh screen | * 18" HV chamber NEG coated and originally built with WP NEG modules and wire mesh screen | ||
| − | * 10" CF flange vacuum fired | + | * 10" CF flange vacuum fired with holes for S&A tooling |
* R30 pure alumina insulator | * R30 pure alumina insulator | ||
* Spherical electrode | * Spherical electrode | ||
* Pierce geometry electrode front end | * Pierce geometry electrode front end | ||
* 2" diameter anode CEBAF style | * 2" diameter anode CEBAF style | ||
| − | * Anode-cathode gap | + | * Anode-cathode gap 2.506 inches from flat face of anode to the face of the GaAs wafer |
* First attempt to HV condition in UITF resulted in punctured ceramic at 160 kV, unusual voltage induced gas desorption. We suspect due to thee NEG coated chamber | * First attempt to HV condition in UITF resulted in punctured ceramic at 160 kV, unusual voltage induced gas desorption. We suspect due to thee NEG coated chamber | ||
* [[Media:Ball Electrode Drawing marked up by Carlos Dec 16 2021.pdf]] | * [[Media:Ball Electrode Drawing marked up by Carlos Dec 16 2021.pdf]] | ||
*[https://wiki.jlab.org/ciswiki/index.php/Gun_assemblies,_electrostatic_models_and_field_maps Back to gun assemblies] | *[https://wiki.jlab.org/ciswiki/index.php/Gun_assemblies,_electrostatic_models_and_field_maps Back to gun assemblies] | ||
Latest revision as of 13:48, 28 February 2022
- this assembly is being developed as th next CEBAF 200 kV gun based on the GTS design
- 18" HV chamber NEG coated and originally built with WP NEG modules and wire mesh screen
- 10" CF flange vacuum fired with holes for S&A tooling
- R30 pure alumina insulator
- Spherical electrode
- Pierce geometry electrode front end
- 2" diameter anode CEBAF style
- Anode-cathode gap 2.506 inches from flat face of anode to the face of the GaAs wafer
- First attempt to HV condition in UITF resulted in punctured ceramic at 160 kV, unusual voltage induced gas desorption. We suspect due to thee NEG coated chamber
- Media:Ball Electrode Drawing marked up by Carlos Dec 16 2021.pdf
- Back to gun assemblies