Difference between revisions of "GTS meeting 6 18 18"
Jump to navigation
Jump to search
| Line 2: | Line 2: | ||
| − | * Photocathodes activation with different Sb deposition time (5 mm limited area activation close to the center of GaAs substrate, with 25 A supply to Sb heater ): | + | * Photocathodes activation with different Sb deposition time (5 mm limited area activation close to the center of GaAs substrate, with 25 A supply to Sb heater): |
| − | # 30 minutes Sb deposition | + | # 30 minutes Sb deposition (completed) |
| − | # 60 minutes Sb deposition | + | # 60 minutes Sb deposition (heat cleaning before second attempt, puck was too hot) |
| − | # 90 minutes Sb deposition | + | # 90 minutes Sb deposition (completed) |
| − | * CST microwave studio simulations of 300 kV GTS gun | + | * CST microwave studio simulations of 300 kV GTS gun: [[media:Gabriel_GTS_CST_18June2018.pdf]] |
Revision as of 07:57, 18 June 2018
- GTS updated plan
- Photocathodes activation with different Sb deposition time (5 mm limited area activation close to the center of GaAs substrate, with 25 A supply to Sb heater):
- 30 minutes Sb deposition (completed)
- 60 minutes Sb deposition (heat cleaning before second attempt, puck was too hot)
- 90 minutes Sb deposition (completed)
- CST microwave studio simulations of 300 kV GTS gun: media:Gabriel_GTS_CST_18June2018.pdf